Derive equation (11.28) by taking the integral and limit of equation (11.27).
Show that equation (11.29) follows.
What is the expected occupancy of a state at the conduction band edge for Ge, Si, and diamond at room temperature (300 K)?
Consider Si doped with 1017 As atoms/cm3.
What is the equilibrium hole concentration at 300 K?
How much does this move EF relative to its intrinsic value?
Design a tristate CMOS inverter by adding a control input to a conventional inverter that can force the output to a high impedance (disconnected) state. These are useful for allowing multiple gates to share a single wire.